Biblio

Data tampering threatens data integrity in emerging non-volatile memories (NVMs). Whereas Merkle Tree (MT) memory authentication is effective in thwarting data tampering attacks, it drastically increases cell writes and memory accesses, adversely impacting NVM energy, lifetime, and system performance (instructions per cycle (IPC)). We propose ASSURE, a low overhead, high performance Authentication Scheme for SecURE energy efficient (ASSURE) NVMs. ASSURE synergistically integrates (i) smart message authentication codes (SMACs), which eliminate redundant cell writes by enabling MAC computation of only modified words on memory writes, with (ii) multi-root MTs (MMTs), which reduce MT reads/writes by constructing either high performance static MMTs (SMMTs) or low overhead dynamic MMTs (DMMTs) over frequently accessed memory regions. Our full-system simulations of the SPEC CPU2006 benchmarks on a triple-level cell (TLC) resistive RAM (RRAM) architecture show that on average, SMMT ASSURE (DMMT ASSURE) reduces NVM energy by 59% (55%), increases memory lifetime by 2.36x (2.11x), and improves IPC by 11% (10%), over state-of-the-art MT memory authentication.

Data persistence in emerging non-volatile memories (NVMs) poses a multitude of security vulnerabilities, motivating main memory encryption for data security. However, practical encryption algorithms demonstrate strong diffusion characteristics that increase cell flips, resulting in increased write energy/latency and reduced lifetime of NVMs. State-of-the-art security solutions have focused on reducing the encryption penalty (increased write energy/latency and reduced memory lifetime) in single-level cell (SLC) NVMs; however, the realization of low encryption penalty solutions for multi-/triple-level cell (MLC/TLC) secure NVMs remains an open area of research. This work synergistically integrates zero-based partial writes with XOR-based energy masking to realize Smartly EnCRypted Energy efficienT, i.e., SECRET MLC/TLC NVMs, without compromising the security of the underlying encryption technique. Our simulations on an MLC (TLC) resistive RAM (RRAM) architecture across SPEC CPU2006 workloads demonstrate that for 6.25% (7.84%) memory overhead, SECRET reduces write energy by 80% (63%), latency by 37% (49%), and improves memory lifetime by 63% (56%) over conventional advanced encryption standard-based (AES-based) counter mode encryption.

Data persistence in emerging non-volatile memories (NVMs) poses a multitude of security vulnerabilities, motivating main memory encryption for data security. However, practical encryption algorithms demonstrate strong diffusion characteristics that increase cell flips, resulting in increased write energy/latency and reduced lifetime of NVMs. State-of-the-art security solutions have focused on reducing the encryption penalty (increased write energy/latency and reduced memory lifetime) in single-level cell (SLC) NVMs; however, the realization of low encryption penalty solutions for multi-/triple-level cell (MLC/TLC) secure NVMs remains an open area of research. This work synergistically integrates zero-based partial writes with XOR-based energy masking to realize Smartly EnCRypted Energy efficienT, i.e., SECRET MLC/TLC NVMs, without compromising the security of the underlying encryption technique. Our simulations on an MLC (TLC) resistive RAM (RRAM) architecture across SPEC CPU2006 workloads demonstrate that for 6.25% (7.84%) memory overhead, SECRET reduces write energy by 80% (63%), latency by 37% (49%), and improves memory lifetime by 63% (56%) over conventional advanced encryption standard-based (AES-based) counter mode encryption.