Biblio

Nanosize multiferroic La-doped YFeO3 powders are harvested via a low-temperature solid-state reaction method. X-ray diffraction (XRD), scanning electron microscopy (SEM) and Raman spectra analysis reveal that with La addition, YFeO3 powders are successfully fabricated at a lower temperature with the size below 60 nm, and a refined structure is obtained. Magnetic hysteresis loop illustrates ferromagnetic behavior of YFeO3 nano particles can be enhanced with La addition. The maximum and remnant magnetization of the powders are about 4.03 and 1.22 emu/g, respectively. It is shown that the optical band gap is around 2.25 eV, proving that La doped YFeO3 nano particles can strongly absorb visible light. Both magnetic and optical properties are greatly enhanced with La addition, proving its potential application in magnetic and optical field.

Novel magneto-optical isolator and self-holding optical switch with an a-Si:H microring resonator are demonstrated. The devices are driven by the remanence of integrated thin-film magnet and, therefore, maintain their state without any power supply.

Summary form only given. Authentication of people or objects using physical keys is insecure against secret duplication. Physical unclonable functions (PUF) are special physical keys that are assumed to be unclonable due to the large number of degrees of freedom in their manufacturing [1]. Opaque scattering media, such as white paint and teeth, comprise of millions of nanoparticles in a random arrangement. Under coherent light illumination, the multiple scattering from these nanoparticles gives rise to a complex interference resulting in a speckle pattern. The speckle pattern is seemingly random but highly sensitive to the exact position and size of the nanoparticles in the given piece of opaque scattering medium [2], thereby realizing an ideal optical PUF. These optical PUFs enabled applications such as quantum-secure authentication (QSA) and communication [3, 4].

We demonstrate high-speed operation of ultracompact electroabsorption modulators based on epsilon-near-zero confinement in indium oxide (In$_\textrm2$$_\textrm3$\$) on silicon using field-effect carrier density tuning. Additionally, we discuss strategies to enhance modulator performance and reduce confinement-related losses by introducing high-mobility conducting oxides such as cadmium oxide (CdO).