Biblio

Emerging next generation wireless communication devices call for high-performance filters that operate at 3-10 GHz frequency range and offer low loss, small form factor, wide bandwidth and steep skirts. Bulk and surface acoustic wave devices have been long used in the RF front-end for filtering applications, however their operation frequencies are mostly below 2.6 GHz band. To scale up the frequency of the filters, the thickness of the piezoelectric material needs to be reduced to sub-micron ranges. One of the challenges of such scaling is maintaining high electromechanical coupling as the film thickness decreases, which in turn, determines the filter bandwidth.Aluminum Nitride (AlN) - popular in today's film bulk acoustic resonators (FBARs) and mostly deposited using sputtering techniques-shows degraded crystal quality and poor electromechanical coupling when the thickness of AlN film is smaller than 1 μm.In this work, we propose using high-quality single-crystalline AlN and Scandium (Sc)-doped AlN epi-layers grown on Si substrates, wherein high crystal quality is maintained for ultra-thin films of only 400 nm thickness. Experimental results verify improved kt2 for 3-10 GHz resonators, with quality factors of the order of 250 and kt2 values of up to 5%based on bulk acoustic wave resonators. The experimental results suggest that single-crystal Sc-AlN is a great material candidate for 5G resonators and filters.

Current BLE transmitters are susceptible to selective jamming due to long dwell times in a channel. To mitigate these attacks, we propose physical-layer security through an ultra-fast bit-level frequency-hopping (FH) scheme by exploiting the frequency agility of bulk acoustic wave resonators (BAW). Here we demonstrate the first integrated bit-level FH transmitter (TX) that hops at 1$μ$s period and uses data-driven random dynamic channel selection to enable secure wireless communications with additional data encryption. This system consists of a time-interleaved BAW-based TX implemented in 65nm CMOS technology with 80MHz coverage in the 2.4GHz ISM band and a measured power consumption of 10.9mW from 1.1V supply.