Biblio

Surface acoustic wave devices based on LiNbO3/interlayer/substrate layered structure have attracted great attention due to the high electromechanical coupling coefficient (K2) of LiNbO3 and the energy confinement effect of the layered structure. In this study, 30° YX-LiNbO3 (LN)/SiO2/Si multilayered structure, which can excited shear-horizontal surface acoustic wave (SH-SAW) with high K2, was proposed. The optimized orientation of LiNbO3 was verified by the effective permittivity method based on the stiffness matrix. The phase velocity, K2 value, and temperature coefficient of frequency (TCF) of the SH-SAW were calculated as a function of the LiNbO3 thickness at different thicknesses of the SiO2 in 30° YX-LiNbO3/SiO2/Si multilayer structure by finite element method (FEM). The results show that the optimized LiNbO3 thickness is 0.1 and the optimized SiO2 thickness is 0.2λ. The optimized Al electrode thickness and metallization ratio are 0.07 and 0.4, respectively. The K2 of the SH-SAW is 29.89%, the corresponding phase velocity is 3624.00 m/s and TCF is about 10 ppm/°C with the optimized IDT/30° YX-LiNbO3/SiO2/Si layered structure.

This paper reports high frequency surface acoustic wave (SAW) devices developed on Sc doped (30%) AlN on high resistivity Si for demonstrating surface acoustic wave – spin wave coupling. Enhanced Q-factors were found for both propagation modes – Rayleigh (4.7 GHz) and Sezawa (8 GHz). SAW/SW (spin wave) coupling is proven for two-ports SAW structures having a magnetostrictive layer of Ni between the two interdigitated transducers (IDTs). A decrease of 3.42 dB was observed in the amplitude of the transmission parameter, at resonance, when the magnetic field was applied. The angle between the applied magnetic field and the SAW propagation direction is π/4.

This paper is the first to investigate the long-term stability of Surface Acoustic Wave Gyroscopes (SAWG) using an ovenized control system. Monolithic integration of a MEMS heater adjacent to SAW devices on Lithium Niobate over insulator substrate (LNOI) tightly couples frequency-based temperature detection with heating for temperature and frequency stabilization. This first prototype demonstrates the ability to minimize the temperature variations of the SAWG to below ±10 μK and stabilize the SAWG resonance frequency to ±0.2 ppm. This approach thus eliminates the thermal drift in a SAWG and enables the development of a new generation of MEMS-based gyroscopes with long-term stability.

Emerging next generation wireless communication devices call for high-performance filters that operate at 3-10 GHz frequency range and offer low loss, small form factor, wide bandwidth and steep skirts. Bulk and surface acoustic wave devices have been long used in the RF front-end for filtering applications, however their operation frequencies are mostly below 2.6 GHz band. To scale up the frequency of the filters, the thickness of the piezoelectric material needs to be reduced to sub-micron ranges. One of the challenges of such scaling is maintaining high electromechanical coupling as the film thickness decreases, which in turn, determines the filter bandwidth.Aluminum Nitride (AlN) - popular in today's film bulk acoustic resonators (FBARs) and mostly deposited using sputtering techniques-shows degraded crystal quality and poor electromechanical coupling when the thickness of AlN film is smaller than 1 μm.In this work, we propose using high-quality single-crystalline AlN and Scandium (Sc)-doped AlN epi-layers grown on Si substrates, wherein high crystal quality is maintained for ultra-thin films of only 400 nm thickness. Experimental results verify improved kt2 for 3-10 GHz resonators, with quality factors of the order of 250 and kt2 values of up to 5%based on bulk acoustic wave resonators. The experimental results suggest that single-crystal Sc-AlN is a great material candidate for 5G resonators and filters.