Biblio

This paper proposes a novel kind of direct-current and alternate-decay-current hybrid integrative magnetization and demagnetization power supplies applied to transformer dc bias treatment based on a nanocomposite magnetic material. First, according to the single-phase transformer structure, one dc bias magnetic compensation mechanism was provided. The dc bias flux in the transformer main core could be eliminated directionally by utilizing the material remanence. Second, for the rapid response characteristic of the magnetic material to an external magnetic field, one positive and negative dc magnetization superimposed decaying ac demagnetization hybrid integrative power supplies based on single-phase rectifier circuit and inverter circuit was designed. In order to accurately control the magnetic field strength by which a good de/-magnetization effect could be achieved, this paper adopts the double-loop control technology of the magnetic field strength and magnetizing current for the nanocomposite magnetic state adjustment. Finally, two 10 kVA transformers and the experiment module of the hybrid integrative power supplies were manufactured and built. Experimental results showed that the integrated power supplies have good de/-magnetization effect and practicability, proving the validity and feasibility of the proposed scheme.

A spin-Hall nano-oscillator (SHNO) is a type of spintronic oscillator that shows promising performance as a nanoscale microwave source and for neuromorphic computing applications. Within such nanodevices, a non-ferromagnetic layer in the presence of an external magnetic field and a DC bias current generates an oscillating microwave voltage. For developing optimal nano-oscillators, accurate simulations of the device's complex behaviour are required before fabrication. This work simulates the key behaviour of a nanoconstriction SHNO as the applied DC bias current is varied. The current density and Oersted field of the device have been presented, the magnetisation oscillations have been clearly visualised in three dimensions and the spatial distribution of the active mode determined. These simulations allow designers a greater understanding and characterisation of the device's behaviour while also providing a means of comparison when experimental resultsO are generated.