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2023-04-28
Nicholls, D., Robinson, A., Wells, J., Moshtaghpour, A., Bahri, M., Kirkland, A., Browning, N..  2022.  Compressive Scanning Transmission Electron Microscopy. ICASSP 2022 - 2022 IEEE International Conference on Acoustics, Speech and Signal Processing (ICASSP). :1586–1590.
Scanning Transmission Electron Microscopy (STEM) offers high-resolution images that are used to quantify the nanoscale atomic structure and composition of materials and biological specimens. In many cases, however, the resolution is limited by the electron beam damage, since in traditional STEM, a focused electron beam scans every location of the sample in a raster fashion. In this paper, we propose a scanning method based on the theory of Compressive Sensing (CS) and subsampling the electron probe locations using a line hop sampling scheme that significantly reduces the electron beam damage. We experimentally validate the feasibility of the proposed method by acquiring real CS-STEM data, and recovering images using a Bayesian dictionary learning approach. We support the proposed method by applying a series of masks to fully-sampled STEM data to simulate the expectation of real CS-STEM. Finally, we perform the real data experimental series using a constrained-dose budget to limit the impact of electron dose upon the results, by ensuring that the total electron count remains constant for each image.
ISSN: 2379-190X
2020-04-24
Bahman Soltani, Hooman, Abiri, Habibollah.  2018.  Criteria for Determining Maximum Theoretical Oscillating Frequency of Extended Interaction Oscillators for Terahertz Applications. IEEE Transactions on Electron Devices. 65:1564—1571.

Extended interaction oscillators (EIOs) are high-frequency vacuum-electronic sources, capable to generate millimeter-wave to terahertz (THz) radiations. They are considered to be potential sources of high-power submillimeter wavelengths. Different slow-wave structures and beam geometries are used for EIOs. This paper presents a quantitative figure of merit, the critical unloaded oscillating frequency (fcr) for any specific geometry of EIO. This figure is calculated and tested for 2π standing-wave modes (a common mode for EIOs) of two different slowwave structures (SWSs), one double-ridge SWS driven by a sheet electron beam and one ring-loaded waveguide driven by a cylindrical beam. The calculated fcrs are compared with particle-in-cell (PIC) results, showing an acceptable agreement. The derived fcr is calculated three to four orders of magnitude faster than the PIC solver. Generality of the method, its clear physical interpretation and computational rapidity, makes it a convenient approach to evaluate the high-frequency behavior of any specified EIO geometry. This allows to investigate the changes in geometry to attain higher frequencies at THz spectrum.