Biblio

The fingerprint sensor based on pMUTs was reported [1]. Spatial resolution of the image depends on the size of the acoustic source when a plane wave is used. If the size of the acoustic source is smaller, piezoelectric films with high dielectric constant are required. In this study, in order to obtain small acoustic source, we proposed Pb(Zrx Th-x)O3 (PZT) epitaxial transducers with high dielectric constant. PbTiO3 (PTO) epitaxial films were grown on conductive La-SrTiO3 (STO) substrate by RF magnetron sputtering. Longitudinal wave conversion loss of PTO transducers was measured by a network analyzer. The thermoplastic elastomer was used instead of real fingerprint. We confirmed that conversion loss of piezoelectric film/substrate structure was increased by contacting the elastomer due the change of reflection coefficient of the substrate bottom/elastomer interface. Minimum conversion loss images were obtained by mechanically scanning the soft probe on the transducer surface. We achieved the detection of the fingerprint phantom based on the elastomer in the GHz.

In this letter, ferroelectric memory performance of TiN/Y-doped-HfO2 (HYO)/TiN capacitors is investigated under proton radiation with 3-MeV energy and different fluence (5e13, 1e14, 5e14, and 1e15 ions/cm2). X-ray diffraction patterns confirm that the orthorhombic phase Pbc21 of HYOfilm has no obvious change after proton radiation. Electrical characterization results demonstrate slight variations of the permittivity and ferroelectric hysteresis loop after proton radiation. The remanent polarization (2Pr) of the capacitor decreases with increasing proton fluence. But the decreasing trend of 2Pr is suppressed under high electric fields. Furthermore, the 2Pr degradation with cycling is abated by proton radiation. These results show that the HYO-based ferroelectric memory is highly resistive to proton radiation, which is potentially useful for space applications.