Biblio

This work investigates the impact of mechanical strain on wake-up behavior of planar HfO2 ferroelectric capacitor-based memory. External in-plane strain was applied using a four-point bending tool and strain impact on remanent polarization and coercive voltage of the ferroelectric was monitored. It was established that compressive strain is beneficial for 2Pr improvement, while tensile strain leads to its degradation, with a sensitivity of -8.4 ± 0.5 % per 0.1 % of strain. Strain-induced polarization rotation is considered to be the most likely mechanism affecting 2Pr At the same time, no strain impact on Vcwas observed in the investigated strain range. The results seen here can be utilized to undertake stress engineering of ferroelectric memory in order to improve its performance.

In this letter, ferroelectric memory performance of TiN/Y-doped-HfO2 (HYO)/TiN capacitors is investigated under proton radiation with 3-MeV energy and different fluence (5e13, 1e14, 5e14, and 1e15 ions/cm2). X-ray diffraction patterns confirm that the orthorhombic phase Pbc21 of HYOfilm has no obvious change after proton radiation. Electrical characterization results demonstrate slight variations of the permittivity and ferroelectric hysteresis loop after proton radiation. The remanent polarization (2Pr) of the capacitor decreases with increasing proton fluence. But the decreasing trend of 2Pr is suppressed under high electric fields. Furthermore, the 2Pr degradation with cycling is abated by proton radiation. These results show that the HYO-based ferroelectric memory is highly resistive to proton radiation, which is potentially useful for space applications.