Biblio
In this paper we consider recovering data from USB Flash memory sticks after they have been damaged or electronically erased. We describe the physical structure and theory of operation of Flash memories; review the literature of Flash memory data recovery; and report results of new experiments in which we damage USB Flash memory sticks and attempt to recover their contents. The experiments include smashing and shooting memory sticks, incinerating them in petrol and cooking them in a microwave oven.
We propose a modification to the framework of Universally Composable (UC) security [3]. Our new notion involves comparing the real protocol execution with an ideal execution involving ideal functionalities (just as in UC-security), but allowing the environment and adversary access to some super-polynomial computational power. We argue the meaningfulness of the new notion, which in particular subsumes many of the traditional notions of security. We generalize the Universal Composition theorem of [3] to the new setting. Then under new computational assumptions, we realize secure multi-party computation (for static adversaries) without a common reference string or any other set-up assumptions, in the new framework. This is known to be impossible under the UC framework.
We propose 10 challenges for making automation components into effective "team players" when they interact with people in significant ways. Our analysis is based on some of the principles of human-centered computing that we have developed individually and jointly over the years, and is adapted from a more comprehensive examination of common ground and coordination.
A brief review is given of the memory properties of non-linear ferroelectric materials in terms of the direction of polarization. A sensitive pulse method has been developed for obtaining static remanent polarization data of ferroelectric materials. This method has been applied to study the effect of pulse duration and amplitude and decay of polarization on ferroelectric ceramic materials with fairly high crystalline orientation. These studies indicate that ferroelectric memory devices can be operated in the megacycle ranges. Attempts have been made to develop electrostatically induced memory devices using ferroelectric substances as a medium for storing information. As an illustration, a ferroelectric memory using a new type of switching matrix is presented having a selection ratio 50 or more.