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Novel ScAlN/Si SAW-type devices targeting surface acoustic wave/spin wave coupling. 2021 International Semiconductor Conference (CAS). :67–70.
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2021. This paper reports high frequency surface acoustic wave (SAW) devices developed on Sc doped (30%) AlN on high resistivity Si for demonstrating surface acoustic wave – spin wave coupling. Enhanced Q-factors were found for both propagation modes – Rayleigh (4.7 GHz) and Sezawa (8 GHz). SAW/SW (spin wave) coupling is proven for two-ports SAW structures having a magnetostrictive layer of Ni between the two interdigitated transducers (IDTs). A decrease of 3.42 dB was observed in the amplitude of the transmission parameter, at resonance, when the magnetic field was applied. The angle between the applied magnetic field and the SAW propagation direction is π/4.