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2020-04-24
Bertram, Jon, Tanwear, Asfand, Rodriguez, Aurelio, Paterson, Gary, McVitie, Stephen, Heidari, Hadi.  2019.  Spin-Hall Nano-Oscillator Simulations. 2019 IEEE SENSORS. :1—4.

A spin-Hall nano-oscillator (SHNO) is a type of spintronic oscillator that shows promising performance as a nanoscale microwave source and for neuromorphic computing applications. Within such nanodevices, a non-ferromagnetic layer in the presence of an external magnetic field and a DC bias current generates an oscillating microwave voltage. For developing optimal nano-oscillators, accurate simulations of the device's complex behaviour are required before fabrication. This work simulates the key behaviour of a nanoconstriction SHNO as the applied DC bias current is varied. The current density and Oersted field of the device have been presented, the magnetisation oscillations have been clearly visualised in three dimensions and the spatial distribution of the active mode determined. These simulations allow designers a greater understanding and characterisation of the device's behaviour while also providing a means of comparison when experimental resultsO are generated.

2017-05-19
He, Zhezhi, Fan, Deliang.  2016.  A Low Power Current-Mode Flash ADC with Spin Hall Effect Based Multi-Threshold Comparator. Proceedings of the 2016 International Symposium on Low Power Electronics and Design. :314–319.

Current-mode Analog-to-Digital Converter (ADC) has drawn many attentions due to its high operating speed, power and ground noise immunity, and etc. However, 2n – 1 comparators are required in traditional n-bit current-mode ADC design, leading to inevitable high power consumption and large chip area. In this work, we propose a low power and compact current mode Multi-Threshold Comparator (MTC) based on giant Spin Hall Effect (SHE). The two threshold currents of the proposed SHE-MTC are 200μA and 250μA with 1ns switching time, respectively. The proposed current-mode hybrid spin-CMOS flash ADC based on SHE-MTC reduces the number of comparators almost by half (2n-1), thus correspondingly reducing the required current mirror branches, total power consumption and chip area. Moreover, due to the non-volatility of SHE-MTC, the front-end analog circuits can be switched off when it is not required to further increase power efficiency. The device dynamics of SHE-MTC is simulated using a numerical device model based on Landau-Lifshitz-Gilbert (LLG) equation with Spin-Transfer Torque (STT) term and SHE term. The device-circuit co-simulation in SPICE (45nm CMOS technology) have shown that the average power dissipation of proposed ADC is 1.9mW, operating at 500MS/s with 1.2 V power supply. The INL and DNL are in the range of 0.23LSB and 0.32LSB, respectively.