Biblio

Physical unclonable functions(PUFs) are widely used as hardware root-of-trust to secure IoT devices, data and services. A PUF exploits inherent randomness introduced during manufacturing to give a unique digital fingerprint. Static Random-Access Memory (SRAM) based PUFs can be used as a mature technology for authentication. An SRAM with a number of SRAM cells gives an unrepeatable and random pattern of 0's and 1's during power on. As it is a unique pattern, it can be called as SRAM fingerprint and can be used as a PUF. The chance of producing more number of same values (either zero or one) is higher during power on. If a particular value present at almost all the cell during power on, it will lead to the dominance of either zero or one in the cryptographic key sequence. As the cryptographic key is generated by randomly taking address location of SRAM cells, (the subset of power on values of all the SRAM cells)the probability of occurring the same sequence most of the time is higher. In order to avoid that situation, SRAM should have to produce an equal number of zeros and ones during power on. SRAM PUF is implemented in Cadence Virtuoso tool. To generate equal zeros and ones during power on, variations can be done in the physical dimensions and to increase the stability body biasing can be effectively done.

The start-up value of an SRAM cell is unique, random, and unclonable as it is determined by the inherent process mismatch between transistors. These properties make SRAM an attractive circuit for generating encryption keys. The primary challenge for SRAM based key generation, however, is the poor stability when the circuit is subject to random noise, temperature and voltage changes, and device aging. Temporal majority voting (TMV) and bit masking were used in previous works to identify and store the location of unstable or marginally stable SRAM cells. However, TMV requires a long test time and significant hardware resources. In addition, the number of repetitive power-ups required to find the most stable cells is prohibitively high. To overcome the shortcomings of TMV, we propose a novel data remanence based technique to detect SRAM cells with the highest stability for reliable key generation. This approach requires only two remanence tests: writing `1' (or `0') to the entire array and momentarily shutting down the power until a few cells flip. We exploit the fact that the cells that are easily flipped are the most robust cells when written with the opposite data. The proposed method is more effective in finding the most stable cells in a large SRAM array than a TMV scheme with 1,000 power-up tests. Experimental studies show that the 256-bit key generated from a 512 kbit SRAM using the proposed data remanence method is 100% stable under different temperatures, power ramp up times, and device aging.