Biblio

The effects of quantum confinement on the charge distribution in planar Double-Gate (DG) SOI (Siliconon-Insulator) MOSFETs were examined, for sub-10 nm SOI film thicknesses (tsi $łeq$ 10 nm), by modeling the potential experienced by the charge carriers as that of an an-harmonic oscillator potential, consistent with the inherent structural symmetry of nanoscale symmetric DGSOI MOSFETs. By solving the 1-D Poisson's equation using this potential, the results obtained were validated through comparisons with TCAD simulations. The present model satisfactorily predicted the electron density and channel charge density for a wide range of SOI channel thicknesses and gate voltages.

Despite the continuous shrinking of the transistor dimensions, advanced modeling tools going beyond the ballistic limit of transport are still critically needed to ensure accurate device investigations. For that purpose we present here a straight-forward approach to include phonon confinement effects into dissipative quantum transport calculations based on the effective mass approximation (EMA) and the k·p method. The idea is to scale the magnitude of the deformation potentials describing the electron-phonon coupling to obtain the same low-field mobility as with full-band simulations and confined phonons. This technique is validated by demonstrating that after adjusting the mobility value of n- and p-type silicon nanowire transistors, the resulting EMA and k·p I-V characteristics agree well with those derived from full-band studies.