Quantum Confinement Effects and Electrostatics of Planar Nano-Scale Symmetric Double-Gate SOI MOSFETs

Submitted by grigby1 on Tue, 12/17/2019 - 11:31am

Title	Quantum Confinement Effects and Electrostatics of Planar Nano-Scale Symmetric Double-Gate SOI MOSFETs
Publication Type	Conference Paper
Year of Publication	2019
Authors	Medury, Aditya Sankar, Kansal, Harshit
Conference Name	2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)
ISBN Number	978-1-7281-0286-3
Keywords	1D Poisson equation, an-harmonic oscillator potential, channel charge density, charge carriers, charge distribution, composability, confinement, cyber-physical system, Cyber-physical systems, electron density, electrostatics, inherent structural symmetry, MOSFET, nanoelectronics, nanoscale symmetric DGSOI MOSFET, planar nanoscale symmetric double-gate SOI MOSFET, Poisson equation, privacy, pubcrawl, quantum confinement effects, resilience, Resiliency, semiconductor device models, Si, silicon-on-insulator, size 10.0 nm, SOI film thickness, wave-function
Abstract	The effects of quantum confinement on the charge distribution in planar Double-Gate (DG) SOI (Siliconon-Insulator) MOSFETs were examined, for sub-10 nm SOI film thicknesses (tsi $leq$ 10 nm), by modeling the potential experienced by the charge carriers as that of an an-harmonic oscillator potential, consistent with the inherent structural symmetry of nanoscale symmetric DGSOI MOSFETs. By solving the 1-D Poisson's equation using this potential, the results obtained were validated through comparisons with TCAD simulations. The present model satisfactorily predicted the electron density and channel charge density for a wide range of SOI channel thicknesses and gate voltages.
URL	https://ieeexplore.ieee.org/document/8754030
DOI	10.1109/EDSSC.2019.8754030
Citation Key	medury_quantum_2019

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Science of Security VO