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2017. Increasing output power of pulsed-eye safe wavelength range laser diodes by strong doping of the n-optical confinement layer. 2017 IEEE High Power Diode Lasers and Systems Conference (HPD). :17–18.
A semi-analytical model for internal optical losses at high power in a 1.5 μm laser diode with strong n-doping in the n-side of the optical confinement layer is created. The model includes intervalence band absorption by holes supplied by both current flow and two-photon absorption. The resulting losses are shown to be substantially lower than those in a similar, but weakly doped structure. Thus a significant improvement in the output power and efficiency by strong n-doping is predicted.