Increasing output power of pulsed-eye safe wavelength range laser diodes by strong doping of the n-optical confinement layer
| Title | Increasing output power of pulsed-eye safe wavelength range laser diodes by strong doping of the n-optical confinement layer |
| Publication Type | Conference Paper |
| Year of Publication | 2017 |
| Authors | Avrutin, E. A., Ryvkin, B. S., Kostamovaara, J. T. |
| Conference Name | 2017 IEEE High Power Diode Lasers and Systems Conference (HPD) |
| ISBN Number | 978-1-5386-3263-5 |
| Keywords | absorption, composability, confinement, current flow, Cyber-physical systems, Diode lasers, Doping, efficiency, eye safe spectral range, Free electron lasers, gallium arsenide, High power lasers, III-V semiconductors, indium compounds, InGaAsP, internal optical losses, intervalence band absorption, laser efficiency, laser theory, n-optical confinement layer, optical fabrication, optical losses, optical pumping, output power, privacy, pubcrawl, pulsed-eye safe wavelength range laser diodes, resilience, Resiliency, semianalytical model, semiconductor lasers, size 1.5 mum, strong doping, two-photon absorption, two-photon processes |
| Abstract | A semi-analytical model for internal optical losses at high power in a 1.5 mm laser diode with strong n-doping in the n-side of the optical confinement layer is created. The model includes intervalence band absorption by holes supplied by both current flow and two-photon absorption. The resulting losses are shown to be substantially lower than those in a similar, but weakly doped structure. Thus a significant improvement in the output power and efficiency by strong n-doping is predicted. |
| URL | https://ieeexplore.ieee.org/document/8261082 |
| DOI | 10.1109/HPD.2017.8261082 |
| Citation Key | avrutin_increasing_2017 |
- pulsed-eye safe wavelength range laser diodes
- laser theory
- n-optical confinement layer
- optical fabrication
- optical losses
- optical pumping
- output power
- privacy
- pubcrawl
- laser efficiency
- resilience
- Resiliency
- semianalytical model
- semiconductor lasers
- size 1.5 mum
- strong doping
- two-photon absorption
- two-photon processes
- Free electron lasers
- composability
- confinement
- current flow
- cyber-physical systems
- Diode lasers
- Doping
- efficiency
- eye safe spectral range
- absorption
- gallium arsenide
- High power lasers
- III-V semiconductors
- indium compounds
- InGaAsP
- internal optical losses
- intervalence band absorption