Biblio

The effects of quantum confinement on the charge distribution in planar Double-Gate (DG) SOI (Siliconon-Insulator) MOSFETs were examined, for sub-10 nm SOI film thicknesses (tsi $łeq$ 10 nm), by modeling the potential experienced by the charge carriers as that of an an-harmonic oscillator potential, consistent with the inherent structural symmetry of nanoscale symmetric DGSOI MOSFETs. By solving the 1-D Poisson's equation using this potential, the results obtained were validated through comparisons with TCAD simulations. The present model satisfactorily predicted the electron density and channel charge density for a wide range of SOI channel thicknesses and gate voltages.

Micromagnetic simulations of coercivity as a function of external magnetic field direction were performed for a hexagonal array of hemispherical Permalloy nanocaps. The analysis was based on hysteresis loops for arrangements of nanocaps of variable thickness (5 nm and 10 nm). The angular dependence of coercivity had a maximum at about 80° with respect to the arrangement plane. An increase in coercivity with nanocap thickness is related to the magnetization reversal mechanism, where the dipole energy of individual caps generates an effective intermediate axis, locking the magnetic moments. The coercivity has maximum values of 109 Oe for 5 nm and 156 Oe for 10 nm thickness. The remanence decreases monotonically with angle. This is associated with the influence of shape anisotropy, where the demagnetizing field in the plane of the array is much smaller than the demagnetizing field perpendicular to the plane.