Biblio
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2022. A Study on the Hf0.5Zr0.5O2 Ferroelectric Capacitors fabricated with Hf and Zr Chlorides. 2022 China Semiconductor Technology International Conference (CSTIC). :1–3.
Ferroelectric capacitor memory devices with carbon-free Hf0.5Zr0.5O2 (HZO) ferroelectric films are fabricated and characterized. The HZO ferroelectric films are deposited by ALD at temperatures from 225 to 300°C, with HfCl4 and ZrCl4 as the precursors. Residual chlorine from the precursors is measured and studied systematically with various process temperatures. 10nm HZO films with optimal ALD growth temperature at 275°C exhibit remanent polarization of 25µC/cm2 and cycle endurance of 5×1011. Results will be compared with those from HZO films deposited with carbon containing metal-organic precursors.
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2019. On the Coupling Coefficient of ScyAl1-yN-based Piezoelectric Acoustic Resonators. 2019 Joint Conference of the IEEE International Frequency Control Symposium and European Frequency and Time Forum (EFTF/IFC). :1–4.
This work investigates the electromechanical coupling coefficient (kt2) attained by two available piezoelectric acoustic resonator technologies relying on Aluminum Scandium Nitride (ScyAl1-yN) films to operate. In particular, by using a theoretical approach, we extracted the maximum kt2-value attainable, for different scandium-doping concentrations (from 0% to 40%), by Film-Bulk-Acoustic-Resonators (FBARs) and Cross-Sectional-Lamé-Mode Resonators (CLMRs). For the first time, we show how the use of higher scandium doping concentrations can render the kt2 of CLMRs higher (35%) than the one attained by FBARs (28%). Such a unique feature renders CLMRs as ideal candidates to form lithographically defined resonators and filters for next-generation wideband radiofrequency (RF) front-ends.