| Title | A Study on the Hf0.5Zr0.5O2 Ferroelectric Capacitors fabricated with Hf and Zr Chlorides |
| Publication Type | Conference Paper |
| Year of Publication | 2022 |
| Authors | Kim, Yujin, Liu, Zhan, Jiang, Hao, Ma, T.P., Zheng, Jun-Fei, Chen, Phil, Condo, Eric, Hendrix, Bryan, O'Neill, James A. |
| Conference Name | 2022 China Semiconductor Technology International Conference (CSTIC) |
| Date Published | jun |
| Keywords | Capacitors, Chlorine, composability, Ferroelectric films, Films, pubcrawl, remanence, resilience, Resiliency, Semiconductor device measurement, Temperature measurement, Zirconium |
| Abstract | Ferroelectric capacitor memory devices with carbon-free Hf0.5Zr0.5O2 (HZO) ferroelectric films are fabricated and characterized. The HZO ferroelectric films are deposited by ALD at temperatures from 225 to 300degC, with HfCl4 and ZrCl4 as the precursors. Residual chlorine from the precursors is measured and studied systematically with various process temperatures. 10nm HZO films with optimal ALD growth temperature at 275degC exhibit remanent polarization of 25uC/cm2 and cycle endurance of 5x1011. Results will be compared with those from HZO films deposited with carbon containing metal-organic precursors. |
| DOI | 10.1109/CSTIC55103.2022.9856746 |
| Citation Key | kim_study_2022 |
A Study on the Hf0.5Zr0.5O2 Ferroelectric Capacitors fabricated with Hf and Zr Chlorides