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2021. Oscillating Electron Mobility in DoubleV-shaped Quantum Well based Field Effect Transistor Structure. 2021 Devices for Integrated Circuit (DevIC). :27–30.
The electron mobility μ exhibits oscillatory behavior with gate electric field F in an asymmetrically doped double V-shaped AlxGa1-xAs quantum well field effect transistor structure. By changing F, single-double-single subband occupancy of the system is obtained. We show that μ oscillates within double subband occupancy as a function of F near resonance of subband states due to the relocation of subband wave functions between the wells through intersubband effects.