Visible to the public Oscillating Electron Mobility in DoubleV-shaped Quantum Well based Field Effect Transistor Structure

TitleOscillating Electron Mobility in DoubleV-shaped Quantum Well based Field Effect Transistor Structure
Publication TypeConference Paper
Year of Publication2021
AuthorsJena, Devika, Palo, S. K, Sahu, T., Panda, A. K
Conference Name2021 Devices for Integrated Circuit (DevIC)
Keywordscomposability, Electric potential, Electron mobility, Field effect transistors, Gate electric field, integrated circuits, Logic gates, Metrics, Mobility oscillation, oscillating behaviors, privacy, pubcrawl, Quantum mechanics, Resiliency, Scattering, V-shaped quantum well
AbstractThe electron mobility m exhibits oscillatory behavior with gate electric field F in an asymmetrically doped double V-shaped AlxGa1-xAs quantum well field effect transistor structure. By changing F, single-double-single subband occupancy of the system is obtained. We show that m oscillates within double subband occupancy as a function of F near resonance of subband states due to the relocation of subband wave functions between the wells through intersubband effects.
DOI10.1109/DevIC50843.2021.9455828
Citation Keyjena_oscillating_2021