Title | Oscillating Electron Mobility in DoubleV-shaped Quantum Well based Field Effect Transistor Structure |
Publication Type | Conference Paper |
Year of Publication | 2021 |
Authors | Jena, Devika, Palo, S. K, Sahu, T., Panda, A. K |
Conference Name | 2021 Devices for Integrated Circuit (DevIC) |
Keywords | composability, Electric potential, Electron mobility, Field effect transistors, Gate electric field, integrated circuits, Logic gates, Metrics, Mobility oscillation, oscillating behaviors, privacy, pubcrawl, Quantum mechanics, Resiliency, Scattering, V-shaped quantum well |
Abstract | The electron mobility m exhibits oscillatory behavior with gate electric field F in an asymmetrically doped double V-shaped AlxGa1-xAs quantum well field effect transistor structure. By changing F, single-double-single subband occupancy of the system is obtained. We show that m oscillates within double subband occupancy as a function of F near resonance of subband states due to the relocation of subband wave functions between the wells through intersubband effects. |
DOI | 10.1109/DevIC50843.2021.9455828 |
Citation Key | jena_oscillating_2021 |