Biblio
The effects of quantum confinement on the charge distribution in planar Double-Gate (DG) SOI (Siliconon-Insulator) MOSFETs were examined, for sub-10 nm SOI film thicknesses (tsi $łeq$ 10 nm), by modeling the potential experienced by the charge carriers as that of an an-harmonic oscillator potential, consistent with the inherent structural symmetry of nanoscale symmetric DGSOI MOSFETs. By solving the 1-D Poisson's equation using this potential, the results obtained were validated through comparisons with TCAD simulations. The present model satisfactorily predicted the electron density and channel charge density for a wide range of SOI channel thicknesses and gate voltages.
Pre-Silicon hardware Trojan detection has been studied for years. The most popular benchmark circuits are from the Trust-Hub. Their common feature is that the probability of activating hardware Trojans is very low. This leads to a series of machine learning based hardware Trojan detection methods which try to find the nets with low signal probability of 0 or 1. On the other hand, it is considered that, if the probability of activating hardware Trojans is high, these hardware Trojans can be easily found through behaviour simulations or during functional test. This paper explores the "grey zone" between these two opposite scenarios: if the activation probability of a hardware Trojan is not low enough for machine learning to detect it and is not high enough for behaviour simulation or functional test to find it, it can escape from detection. Experiments show the existence of such hardware Trojans, and this paper suggests a new set of hardware Trojan benchmark circuits for future study.
We demonstrate high-speed operation of ultracompact electroabsorption modulators based on epsilon-near-zero confinement in indium oxide (In$_\textrm2$$_\textrm3$\$) on silicon using field-effect carrier density tuning. Additionally, we discuss strategies to enhance modulator performance and reduce confinement-related losses by introducing high-mobility conducting oxides such as cadmium oxide (CdO).
State-of-the-art convolutional neural networks (ConvNets) are now able to achieve near human performance on a wide range of classification tasks. Unfortunately, current hardware implementations of ConvNets are memory power intensive, prohibiting deployment in low-power embedded systems and IoE platforms. One method of reducing memory power is to exploit the error resilience of ConvNets and accept bit errors under reduced supply voltages. In this paper, we extensively study the effectiveness of this idea and show that further savings are possible by injecting bit errors during ConvNet training. Measurements on an 8KB SRAM in 28nm UTBB FD-SOI CMOS demonstrate supply voltage reduction of 310mV, which results in up to 5.4× leakage power reduction and up to 2.9× memory access power reduction at 99% of floating-point classification accuracy, with no additional hardware cost. To our knowledge, this is the first silicon-validated study on the effect of bit errors in ConvNets.
This paper briefly presents a position that hardware-based roots of trust, integrated in silicon with System-on-Chip (SoC) solutions, represent the most current stage in a progression of technologies aimed at realizing the most foundational computer security concepts. A brief look at this historical progression from a personal perspective is followed by an overview of more recent developments, with particular focus on a root of trust for cryptographic key provisioning and SoC feature management aimed at achieving supply chain assurances and serves as a basis for trust that is linked to properties enforced in hardware. The author assumes no prior knowledge of these concepts and developments by the reader.