Biblio

Hexagonal CdS and Fe-doped CdS nanorods were synthesised by a facile hydrothermal method and characterised by X-ray diffraction, energy dispersive X-ray spectroscopy, UV-vis absorption, photoluminescence, and X-ray photoelectron spectroscopy. The magnetic properties of undoped and Fe-doped CdS nanorods were investigated at room temperature. The experimental results demonstrate that the ferromagnetism of the Fe-doped CdS nanorods differs from that of the undoped CdS nanorods. The remanence magnetisation (Mr) and the coercive field (Hc) of the Fe-doped CdS nanorods were 4.9 × 10-3 emu/g and 270.6 Oe, respectively, while photoluminescence properties were not influenced by doping. First-principle calculations show that the ferromagnetism in Fe-doped CdS nanocrystal arose not only from the Fe dopants but also from the Cd vacancies, although the main contribution was due to the Fe dopants.

Emerging next generation wireless communication devices call for high-performance filters that operate at 3-10 GHz frequency range and offer low loss, small form factor, wide bandwidth and steep skirts. Bulk and surface acoustic wave devices have been long used in the RF front-end for filtering applications, however their operation frequencies are mostly below 2.6 GHz band. To scale up the frequency of the filters, the thickness of the piezoelectric material needs to be reduced to sub-micron ranges. One of the challenges of such scaling is maintaining high electromechanical coupling as the film thickness decreases, which in turn, determines the filter bandwidth.Aluminum Nitride (AlN) - popular in today's film bulk acoustic resonators (FBARs) and mostly deposited using sputtering techniques-shows degraded crystal quality and poor electromechanical coupling when the thickness of AlN film is smaller than 1 μm.In this work, we propose using high-quality single-crystalline AlN and Scandium (Sc)-doped AlN epi-layers grown on Si substrates, wherein high crystal quality is maintained for ultra-thin films of only 400 nm thickness. Experimental results verify improved kt2 for 3-10 GHz resonators, with quality factors of the order of 250 and kt2 values of up to 5%based on bulk acoustic wave resonators. The experimental results suggest that single-crystal Sc-AlN is a great material candidate for 5G resonators and filters.