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Cyber-Physical Systems Virtual Organization
Read-only archive of site from September 29, 2023.
CPS-VO
hafnium zirconium oxide
biblio
Ferroelectricity Enhancement in Hf0.5Zr0.5O2 Capacitors by Incorporating Ta2O5 Dielectric Seed Layers
Submitted by aekwall on Tue, 08/31/2021 - 11:53am
pubcrawl
Resiliency
Compositionality
remanence
dielectric seed layer
ferroelectricity
hafnium zirconium oxide
remanent polarization
Ta2O5
