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Cyber-Physical Systems Virtual Organization
Read-only archive of site from September 29, 2023.
CPS-VO
remanent polarization
biblio
Ferroelectricity Enhancement in Hf0.5Zr0.5O2 Capacitors by Incorporating Ta2O5 Dielectric Seed Layers
Submitted by aekwall on Tue, 08/31/2021 - 11:53am
pubcrawl
Resiliency
Compositionality
remanence
dielectric seed layer
ferroelectricity
hafnium zirconium oxide
remanent polarization
Ta2O5
biblio
Proton Radiation Effects on Y-Doped HfO2-Based Ferroelectric Memory
Submitted by aekwall on Mon, 11/30/2020 - 12:07pm
proton radiation effects
Hafnium compounds
HfO₂
HfO2:Y
HYO-based ferroelectric memory
hysteresis
Permittivity
proton
proton effects
proton fluence
ferroelectric thin films
Protons
radiation
remanent polarization
TiN/Y-doped-HfO2/TiN capacitors
X-ray diffraction patterns
Y-doped HfO2-based ferroelectric memory
Yttrium
Magnetic Remanence
Electric fields
Resiliency
pubcrawl
cyber physical systems
Capacitors
Compositionality
remanence
X-ray diffraction
dielectric hysteresis
dielectric polarisation
Internet of Things
electrical characterization
electrical resistivity
Fatigue
ferroelectric capacitors
ferroelectric hysteresis loop
ferroelectric memory
ferroelectric memory performance
ferroelectric storage
