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Cyber-Physical Systems Virtual Organization
Read-only archive of site from September 29, 2023.
CPS-VO
semiconductor device models
biblio
Quantum Confinement Effects and Electrostatics of Planar Nano-Scale Symmetric Double-Gate SOI MOSFETs
Submitted by grigby1 on Tue, 12/17/2019 - 12:31pm
nanoscale symmetric DGSOI MOSFET
wave-function
SOI film thickness
size 10.0 nm
silicon-on-insulator
Si
semiconductor device models
Resiliency
resilience
quantum confinement effects
pubcrawl
privacy
Poisson equation
planar nanoscale symmetric double-gate SOI MOSFET
1D Poisson equation
nanoelectronics
MOSFET
inherent structural symmetry
electrostatics
electron density
cyber-physical systems
cyber-physical system
confinement
composability
charge distribution
charge carriers
channel charge density
an-harmonic oscillator potential
biblio
Phonon confinement effects in diffusive quantum transport simulations with the effective mass approximation and k·p method
Submitted by grigby1 on Thu, 08/23/2018 - 11:59am
Logic gates
Transistors
Strain
Silicon
semiconductor device models
Resiliency
resilience
pubcrawl
privacy
phonons
phonon confinement effects
p-type silicon nanowire transistors
nanowires
n-type silicon nanowire transistors
advanced modeling tools
k·p method
elemental semiconductors
electron-phonon coupling
Electric potential
effective mass approximation
effective mass
dissipative quantum transport calculations
diffusive quantum transport simulations
cyber-physical systems
confinement
composability
Charge carrier processes
