Skip to Main Content Area
CPS-VO
Contact Support
Browse
Calendar
Announcements
Repositories
Groups
Search
Search for Content
Search for a Group
Search for People
Search for a Project
Tagcloud
› Go to login screen
Not a member?
Click here to register!
Forgot username or password?
Cyber-Physical Systems Virtual Organization
Read-only archive of site from September 29, 2023.
CPS-VO
channel charge density
biblio
Quantum Confinement Effects and Electrostatics of Planar Nano-Scale Symmetric Double-Gate SOI MOSFETs
Submitted by grigby1 on Tue, 12/17/2019 - 12:31pm
nanoscale symmetric DGSOI MOSFET
wave-function
SOI film thickness
size 10.0 nm
silicon-on-insulator
Si
semiconductor device models
Resiliency
resilience
quantum confinement effects
pubcrawl
privacy
Poisson equation
planar nanoscale symmetric double-gate SOI MOSFET
1D Poisson equation
nanoelectronics
MOSFET
inherent structural symmetry
electrostatics
electron density
cyber-physical systems
cyber-physical system
confinement
composability
charge distribution
charge carriers
channel charge density
an-harmonic oscillator potential
