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Cyber-Physical Systems Virtual Organization

Read-only archive of site from September 29, 2023.

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HYO-based ferroelectric memory

biblio

Visible to the public Proton Radiation Effects on Y-Doped HfO2-Based Ferroelectric Memory

Submitted by aekwall on Mon, 11/30/2020 - 12:07pm
  • proton radiation effects
  • Hafnium compounds
  • HfO₂
  • HfO2:Y
  • HYO-based ferroelectric memory
  • hysteresis
  • Permittivity
  • proton
  • proton effects
  • proton fluence
  • ferroelectric thin films
  • Protons
  • radiation
  • remanent polarization
  • TiN/Y-doped-HfO2/TiN capacitors
  • X-ray diffraction patterns
  • Y-doped HfO2-based ferroelectric memory
  • Yttrium
  • Magnetic Remanence
  • Electric fields
  • Resiliency
  • pubcrawl
  • cyber physical systems
  • Capacitors
  • Compositionality
  • remanence
  • X-ray diffraction
  • dielectric hysteresis
  • dielectric polarisation
  • Internet of Things
  • electrical characterization
  • electrical resistivity
  • Fatigue
  • ferroelectric capacitors
  • ferroelectric hysteresis loop
  • ferroelectric memory
  • ferroelectric memory performance
  • ferroelectric storage

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