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Cyber-Physical Systems Virtual Organization
Read-only archive of site from September 29, 2023.
CPS-VO
HfO₂
biblio
Impact of mechanical strain on wakeup of HfO2 ferroelectric memory
Submitted by aekwall on Fri, 02/04/2022 - 9:20am
Sensitivity
cyber physical systems
wakeup
Tin
Tensile strain
mechanical strain
HfO₂
Hafnium compounds
Ferroelectrics
Internet of Things
Market research
remanence
Compositionality
Resiliency
pubcrawl
Switches
tools
biblio
Proton Radiation Effects on Y-Doped HfO2-Based Ferroelectric Memory
Submitted by aekwall on Mon, 11/30/2020 - 11:07am
proton radiation effects
Hafnium compounds
HfO₂
HfO2:Y
HYO-based ferroelectric memory
hysteresis
Permittivity
proton
proton effects
proton fluence
ferroelectric thin films
Protons
radiation
remanent polarization
TiN/Y-doped-HfO2/TiN capacitors
X-ray diffraction patterns
Y-doped HfO2-based ferroelectric memory
Yttrium
Magnetic Remanence
Electric fields
Resiliency
pubcrawl
cyber physical systems
Capacitors
Compositionality
remanence
X-ray diffraction
dielectric hysteresis
dielectric polarisation
Internet of Things
electrical characterization
electrical resistivity
Fatigue
ferroelectric capacitors
ferroelectric hysteresis loop
ferroelectric memory
ferroelectric memory performance
ferroelectric storage
